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Two-Dimensional Electron Gases at Modulation-doped Oxide Interfaces:Electronic Structure Origins for the Enhanced Electron Mobility


Speaker:

Prof. CHEN Yunzhong

Institute of Physics CAS

Time:2021-5-10 10:30
Place:B1502,Building B,Physical Science Park

Detail:

Abstract:

  Two-dimensional electron gases (2DEGs) formed at the interface between two oxide insulators provide new opportunities for electronics. However, despite of intensive research, it remains a major challenge to increase the mobility of the 2DEG or to order the emerging properties on demand. Herein, I will present our studies on extreme mobility enhancement at LaMnO3-buffered LaAlO3/SrTiO3 (LAO/STO) interface [1] and the tunable ground states of diluted LAO/STO interface [2]. Moreover, I will present our recent results on the intrinsic band dispersion of the 2DEGs in these engineered LAO/STO heterostructures, where the LMO buffer layer is found to suppress not only the formation of oxygen vacancies but also the electron-phonon interaction on the STO side, making the buffered sample different from any other STO-based interfaces including the Mn-diluted LAO/STO system.


References

[1] Y. Z. Chen et al. Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping.Nature Mater. 14, 801 (2015)

[2] Y. L. Gan et al. Diluted Oxide Interfaces with Tunable Ground States, Adv. Mater. 31, 1805970 (2019).


Organizer:Hefei National Laboratory for Physical Sciences at the Microscale




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