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Topological Hall effect of Magnetic Skyrmions

Speaker:

Prof. ZHOU Yan

The Chinese University of Hong Kong (Shenzhen)

Time: 2017-07-13 16:00
Place: ROOM 9004, Hefei National Laboratory Building

Detail:

Abstract:
  Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE). Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. In this proposed invited talk, Dr. Zhou will talk about his recent research results of skyrmion motion in the antiferromagnetically exchange-coupled bilayer system, where a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque [1-4]. This work provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed.
1. Yan Zhou* and M. Ezawa, Nature Communications, 5, 4652, (2014).
2. Yan Zhou et al. Nature Communications, 6, 8193, (2015).
3. X. C. Zhang, Yan Zhou*, M. Ezawa, Nature Communications, 7, 10293 (2016).
4. Proceedings of the IEEE, Vol. 104, pp. 2040, No. 10, October 2016.

Biosketch:
  Dr. Yan ZHOU is currently an associate professor of The Chinese University of Hong Kong (Shenzhen). He has published about 100 peer-reviewed papers including 3 Nature Communications, 1 Nature Physics, and 1 Nano Letters with total Citation of ~1600 and H-index of 24. His recent invited talk include: APS meeting 2014, Magnonics 2015 and MRS Fall meeting 2016, MMM 2016 etc.

Organizer: Hefei National Laboratory for Physical Sciences at the Microscale
   


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