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WANG Deliang, Professor Low-dimensional Physics and Chemistry

Name:  Deliang Wang (D. Wang, 王德亮)
Born:   April  1967, Shangdong, P. R. China
Address: Hefei National Lab for Physical Sciences at Microscale, University of Science and Technology of China, 230026 Hefei, P. R. China
Tel: 86-551-63600450
Fax: 86-551-63606266
E-mail: eedewang@ustc.edu.cn
 
EDUCATION AND RESEARCH EXPERIENCE
 1985-1989 University of Science and Technology, Beijing.
 1989-1994 Institute of Solid State Physics, Chinese Academy of Sciences; Postgraduate and Ph.D candidate.
 1994-1997 Goettingen University; Germany. Ph.D.
 1999-2002 Joint Research Center for Atom Technology, Japan; Research scientist.
 2003-2005 Hong Kong University of Science and Technology; Research associate.
 2005-now Professor, Hefei National Lab for Physical Sciences at Microscale, University of Science and Technology of China, 230026, Hefei, P. R. China.
 Honors
 1994 Volkswagen Foundation Fellowship, Germany.
 1999 Fellowship of Joint Research Center for Atom Technology, Japan.
 2012 Teaching award of Anhui Province, Second Prize, China.
 
RESEARCH INTERESTS
1) Semiconductor thin film growth and device fabrication;
2) High efficient semiconductor solar cells.
 
CURRENT RESEARCH PROJECTS
1) Research and fabrication of high efficient CdTe thin film solar cell. National Natural Science Foundation of China (NSFC, Grant No. 51272247).
2) Study on the coupling of nano plasmon with non-equilibrium processes in solar cells. National Natural Science Foundation of China (NSFC, Grant No. 61474103).
 
REPRESENTATIVE PUBLICATIONS
1) Stable CdTe solar cel lwith V2O5 as a back contact buffer layer
K. Shen, R. Yang, D. Wang, M. Jeng, S. Chaudhary, K. Ho, D. Wang*
Solar Energy Materials & Solar Cells, 144, 500–508 (2016).
2) CdTe solar cell performance under low-intensity light irradiance
K. Shen, Q. Li, D. Wang, R. Yang, Y. Deng, M. Jeng, D. Wang*
Solar Energy Materials & Solar Cells, 144, 472–480 (2016).
3) Stable CdTe thin film solar cells with a MoOx back contact buffer layer
R. Yang, D. Wang, M. Jeng, K. Ho, D. Wang*
Prog. Photovolt: Res. Appl. 24, 59-65 (2016).
4) CdTe solar cell performance under high-intensity light irradiance
W. Li, R. Yang, D. Wang*
Solar Energy Materials & Solar Cells
, 123, 249–254 (2014).
5) Band alignment of ultra-thin hetero-structure ZnO/TiO2 junction
K. Shen, K. Wu, D. Wang*
Materials Research Bulletin
, 51, 141-144 (2014).
6) Effect of surface protonation on device performance of dye-sensitized TiO2 solar cell
K. Wu, K. Shen, Y. Yu, D. Wang*
Solar Energy
, 94, 195-201 (2013).
7) Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale
Z. Bai, J. Yang, D. Wang*
Appl. Phys. Lett.
, 99, 143502 (2011).
8) Dye-sensitized solar cells with modified TiO2 surface chemical states: the role of Ti3+
Y. Yang, K. Wu, D. Wang*
Appl. Phys. Lett.
, 99, PP192014 (2011).
9) Mixed phases in p-type CuInSe2 thin films detected by using micro-Raman scattering spectroscopy
D. Wang*, L. Wan, Z. Bai, Y. Cao
Appl. Phys. Lett., 92, 211912 (2008).
10) Lattice vibration fundamentals of nanocrystalline anatase: a temperature-dependent study by using micro-Raman scattering spectroscopy
D. Wang,* B. Chen, J. Zhao
J. Appl. Phys. 101, 113501 (2007).
11) Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
Z. Yang, R. Wang, S. Jia, D. Wang, B. Zhang, K.M. Lau, K.J. Chen
Appl. Phys. Lett., 88, 041913 (2006).
12) Comparison of blue and green InGaN/GaN multi-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
Y. Qi, H. Liang, D. Wang, Z. Lu, W. Tang, K.M. Lau
Appl. Phys. Lett., 86, 101903 (2005).
13) Micro-Raman scattering study of stress distribution in GaN films grown on patterned Si(111) by metalorganic chemical vapor deposition
D. Wang,* S. Jia, K. J. Chen, K. M. Lau, Y. Dikme, P. Van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, M. Heuken
J. Appl. Phys., 97, 056103 (2005).
14) Si-doped cubic GaN grown on Si(001) substrate coated with a thin flat SiC buffer layer
D. Wang,* S. Yoshida, and M. Ichikawa
Appl. Phys. Lett. 80, 2472 (2002).
15) Growth of Hexagonal GaN on Si(111) Coated with a Thin Flat SiC Buffer Layer
D. Wang,* Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida
Appl. Phys. Lett. 77, 1846(2000).
16) Heteroepitaxial Growth of Cubic GaN on Si(001) Coated with Thin Flat SiC by Plasma-Assisted Molecular Beam Epitaxy
D. Wang,* Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida
Appl. Phys. Lett. 76, 1683 (2000).


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