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Electric-Field-Controlled Nonvolatile Magnetization Rotation and Magnetoresistance Effect in Co/Cu/Ni Spin Valves on Piezoelectric Substrates
2018-09-30
ACS Appl. Mater. Interfaces 10(25):21390-21397 Jun 2018 

ACS Appl. Mater. Interfaces 10(25):21390-2139

Abstract:
ACS Appl. Mater. Interfaces 10(25):21390-21397 Jun 2018

Zhao, Wenbo; Huang, Weichuan; Liu, Chuanchuan; Hou, Chuangming; Chen, Zhiwei; Yin, Yuewei; Li, Xiaoguang

Abstract:
Electric-field control of magnetism is a key issue for the future development of low-power spintronic devices. By utilizing the opposite strain responses of the magnetic anisotropies in Co and Ni films, a Co/Cu/Ni/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) spin-valve/piezoelectric heterostructure with ∼7 nm Cu spacer layer was properly designed and fabricated. The purely electric-field-controlled nonvolatile and reversible magnetization rotations in the Co free layer were achieved, whereas the magnetization of the Ni fixed layer was almost unchanged. Accordingly, not only the electroresistance but also the electric-field-tuned magnetoresistance effects were obtained, and more importantly at least six nonvolatile magnetoresistance states in the strain-tuned spin valve were achieved by setting the PMN-PT into different nonvolatile piezo-strain states. These findings highlight potential strategies for designing electric-field-driven multistate spintronic devices.


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