ZHANG Hui, ProfessorSingle-molecule Physics and Chemistry
Name: ZHANG Hui(张　汇)
Address:96 JinZhai Road, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
Tel:86-551-63607185
E-mail:huiz@ustc.edu.cn
Web:http://staff.ustc.edu.cn/~huiz
 
 
EDUCATION AND RESEARCH EXPERIENCE 
Research
February 2017 ~ PresentSpecial Appointment Professor, Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China (USTC)
October 2013 ~ December 2016Postdoctor fellow, Electrical and Computer Engineering, Institute for Quantum Computing, University of waterloo, Waterloo, Ontario, Canada.
September 2013 ~ November 2012Assistant Researcher, Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China (USTC)
Education
September 2007 ~ November 2012　Ph.D. in Condensed Matter Physics, Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China (USTC), Ph.D. Degree
September 2003 ~ July 2007Undergraduate student, Department of Physics, Anhui University (AHU), Hefei, Anhui, China; B.S. Degree
 
RESEARCH INTERESTS
1)STM of Low-dimensional materials at atomic scale
2)Spin polarized and Josephson junction of magnetism topological insulator
3)Novel two dimensional material, etc.
4)UHV cluster system development
REPRESENTATIVE PUBLICATIONS (*: corresponding author)
1)H. Zhang, X. D. Ma, L. Li, D. Langenberg, C. G. Zeng, G. X. Miao, 2018, “Two-step growth of high-quality Nb/(Bi0.5Sb0.5)2Te3/Nb heterostructures for topological Josephson junctions”, J. Mater. Res, DOI: 10.1557/jmr.2018.195.
2)H. Zhang, F. F. Ming, H. J. Kim, H. B. Zhu, Q. Zhang, H. H. Weitering, X. D. Xiao, C. G. Zeng, J. H. Cho, Z. Y. Zhang, 2014, “Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon”, Phys. Rev. Lett. 113, 196802.
3)H. Zhang, J.-H. Choi, Y. Xu, X. X. Wang, X. F. Zhai, B. Wang, C. G. Zeng, J.-H. Cho, Z. Y. Zhang, J. G. Hou, 2011, “Atomic Structure, Energetics, and Dynamics of Topological Solitons in Indium Chains on Si(111)”, Phys. Rev. Lett., 106, 026801.
4)J. Qi, H. Zhang, D. D. Ji, X. D. Fan, L. Cheng, H. X. Liang, H. Li, C. G. Zeng, Z. Y. Zhang, 2014, “Controlled Ambipolar Tuning and Electronic Superlattice Fabrication of Graphene via Optical Gating”, Adv. Mater., 26, 3735.
5)L. Li, H. Zhang, Y. Yang, G. X. Miao, 2017, High-Quality Epitaxial MgB2, Josephson Junctions Grown by Molecular Beam Epitaxy, Adv. Eng. Mater., 19, 1600792.
6)Y. C. Tang, H. Zhang, S. Kwon, H. R. Mohebbi, D. G. Cory, L. C. Peng, L. Gu, H. Z. Guo, K. J. Jin, G. X. Miao, 2016, Superconducting resonators based on TiN/Tapering/NbN/Tapering /TiN heterostructures, Adv. Eng. Mater., 18, 1816.

7)

W. H. Wang, Y. F. Ji, H. Zhang, A. D. Zhao, B. Wang, J. L. Yang, J. G. Hou, 2012, “Negative Differential Resistance in a Hybrid Silicon-Molecular System: Resonance between the Intrinsic Surface-States and the Molecular Orbital”, ACS Nano, 6, 7066.
8)Z. Y. Lin, J. H. Choi, Q. Zhang, W. Qin, S. Yi, P. D. Wang, L. Li, Y. F. Wang, H. Zhang, Z. Sun, L. M. Wei, S. B. Zhang, T. F. Guo, Q. Y. Lu, J. H. Cho, C. G. Zeng, Z. Y. Zhang, 2018,  “Flatbands and Emergent Ferromagnetic Ordering in Fe3Sn2 Kagome Lattices” Phys. Rev. Lett., 121, 096401.
9)X. X. Li, B. Li, X. D. Fan, L. M. Wei, L. Li, R. Tao, X. Q. Zhang, H. Zhang, Q. Zhang, H. B. Zhu, S. B. Zhang, Z. Y. Zhang, C. G. Zeng, 2018, “Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties”, Nanoscale, 10, 8377.
10)H. X. Liang, L. Cheng, X. F. Zhai, N. Pan, H. L. Guo, J. Zhao, H. Zhang, L. Li, X. Q. Zhang, X. P. Wang, C. G. Zeng, Z. Y. Zhang, J. G. Hou, 2013, “Giant photovoltaic effects driven by residual polar field within unit-cell-scale LaAlO3 films on SrTiO3”, Sci. Rep. 3, 1975.

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