ZHANG Hui

ZHANG Hui, Professor

Single-molecule Physics and Chemistry

Name:

ZHANG Hui(张　汇)

Address:

96 JinZhai Road, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China

Tel:

86-551-63607185

E-mail:

huiz@ustc.edu.cn

Web:

http://staff.ustc.edu.cn/~huiz

EDUCATION AND RESEARCH EXPERIENCE

Research

February 2017 ~ Present	Special Appointment Professor, Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China (USTC)
October 2013 ~ December 2016	Postdoctor fellow, Electrical and Computer Engineering, Institute for Quantum Computing, University of waterloo, Waterloo, Ontario, Canada.
September 2013 ~ November 2012	Assistant Researcher, Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China (USTC)

Education

September 2007 ~ November 2012	Ph.D. in Condensed Matter Physics, Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China (USTC), Ph.D. Degree
September 2003 ~ July 2007	Undergraduate student, Department of Physics, Anhui University (AHU), Hefei, Anhui, China; B.S. Degree

RESEARCH INTERESTS

1)	STM of Low-dimensional materials at atomic scale
2)	Spin polarized and Josephson junction of magnetism topological insulator
3)	Novel two dimensional material, etc.
4)	UHV cluster system development

REPRESENTATIVE PUBLICATIONS (*: corresponding author)

1)	H. Zhang, X. D. Ma, L. Li, D. Langenberg, C. G. Zeng, G. X. Miao, 2018, “Two-step growth of high-quality Nb/(Bi0.5Sb0.5)2Te3/Nb heterostructures for topological Josephson junctions”, *J. Mater. Res*, DOI: 10.1557/jmr.2018.195.
2)	H. Zhang, F. F. Ming, H. J. Kim, H. B. Zhu, Q. Zhang, H. H. Weitering, X. D. Xiao, C. G. Zeng, J. H. Cho, Z. Y. Zhang, 2014, “Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon”, Phys. Rev. Lett. 113, 196802.
3)	H. Zhang, J.-H. Choi, Y. Xu, X. X. Wang, X. F. Zhai, B. Wang, C. G. Zeng, J.-H. Cho, Z. Y. Zhang, J. G. Hou, 2011, “Atomic Structure, Energetics, and Dynamics of Topological Solitons in Indium Chains on Si(111)”, *Phys. Rev. Lett.*, 106, 026801.
4)	J. Qi, H. Zhang, D. D. Ji, X. D. Fan, L. Cheng, H. X. Liang, H. Li, C. G. Zeng, Z. Y. Zhang, 2014, “Controlled Ambipolar Tuning and Electronic Superlattice Fabrication of Graphene via Optical Gating”, *Adv. Mater.*, 26, 3735.
5)	L. Li, H. Zhang, Y. Yang, G. X. Miao, 2017, High-Quality Epitaxial MgB2, Josephson Junctions Grown by Molecular Beam Epitaxy, *Adv. Eng. Mater.*, 19, 1600792.
6)	Y. C. Tang, H. Zhang, S. Kwon, H. R. Mohebbi, D. G. Cory, L. C. Peng, L. Gu, H. Z. Guo, K. J. Jin, G. X. Miao, 2016, Superconducting resonators based on TiN/Tapering/NbN/Tapering /TiN heterostructures, *Adv. Eng. Mater.*, 18, 1816.
7)	W. H. Wang, Y. F. Ji, H. Zhang, A. D. Zhao, B. Wang, J. L. Yang, J. G. Hou, 2012, “Negative Differential Resistance in a Hybrid Silicon-Molecular System: Resonance between the Intrinsic Surface-States and the Molecular Orbital”, *ACS Nano*, 6, 7066.
8)	Z. Y. Lin, J. H. Choi, Q. Zhang, W. Qin, S. Yi, P. D. Wang, L. Li, Y. F. Wang, H. Zhang, Z. Sun, L. M. Wei, S. B. Zhang, T. F. Guo, Q. Y. Lu, J. H. Cho, C. G. Zeng, Z. Y. Zhang, 2018, “Flatbands and Emergent Ferromagnetic Ordering in Fe3Sn2 Kagome Lattices” *Phys. Rev. Lett.*, 121, 096401.
9)	X. X. Li, B. Li, X. D. Fan, L. M. Wei, L. Li, R. Tao, X. Q. Zhang, H. Zhang, Q. Zhang, H. B. Zhu, S. B. Zhang, Z. Y. Zhang, C. G. Zeng, 2018, “Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties”, *Nanoscale*, 10, 8377.
10)	H. X. Liang, L. Cheng, X. F. Zhai, N. Pan, H. L. Guo, J. Zhao, H. Zhang, L. Li, X. Q. Zhang, X. P. Wang, C. G. Zeng, Z. Y. Zhang, J. G. Hou, 2013, “Giant photovoltaic effects driven by residual polar field within unit-cell-scale LaAlO3 films on SrTiO3”, *Sci. Rep.* 3, 1975.